? semiconductor components industries, llc, 2015 may, 2015 ? rev. 1 1 publication order number: NRVTS1260EMFS/d NRVTS1260EMFS exceptionally low leakage trench-based schottky rectifier features ? fine lithography t rench?based schottky technology for very low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? nrv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these are pb?free and halide?free devices typical applications ? switching power supplies including wireless, smartphone and notebook adapters ? high frequency and dc?dc converters ? freewheeling and or?ing diodes ? reverse battery protection ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets flammability rating ul 94?0 @ 0.125 in. ? lead finish: 100% matte sn (tin) ? lead and mounting surfacetemperature for soldering purposes: 260 c max. for 10 seconds ? device meets msl 1 requirements device package shipping ? ordering information schottky barrier rectifiers 12 amperes 60 volts 1,2,3 5,6 so?8 fla t lead case 488aa style 2 te1260 = specific device code a = assembly location y = year w = work week zz = lot traceability marking diagram te1260 aywwzz a a a not used c c 1 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NRVTS1260EMFSt1g so?8 fl (pb?free) 1500 / tape & ree l NRVTS1260EMFSt3g so?8 fl (pb?free) 5000 / tape & ree l www. onsemi.com
NRVTS1260EMFS www. onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v average rectified forward current (rated v r , t c = 162 c) i f(av) 12 a peak repetitive forward current, (rated v r , square wave, 20 khz, t c = 161 c) i frm 24 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 210 a storage temperature range t stg ?65 to +175 c operating junction temperature t j ?55 to +175 c unclamped inductive switching energy (10 mh inductor, non?repetitive) e as 200 mj esd rating (human body model) 3b esd rating (machine model) m4 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case, steady state (assumes 600 mm 2 1 oz. copper bond pad, on a fr4 board) r jc 2.0 c/w electrical characteristics characteristic symbol typ max unit instantaneous forward voltage (note 1) (i f = 6.0 amps, t j = 25 c) (i f = 12 amps, t j = 25 c) (i f = 6.0 amps, t j = 125 c) (i f = 12 amps, t j = 125 c) v f 0.44 0.54 0.35 0.49 ? 0.60 ? 0.57 v instantaneous reverse current (note 1) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r ? 5.4 50 15 a ma product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width = 300 s, duty cycle 2.0%.
NRVTS1260EMFS www. onsemi.com 3 typical characteristics figure 1. typical instantaneous forward characteristics figure 2. maximum instantaneous forward characteristics v f , instantaneous forward voltage (v) v f , instantaneous forward voltage (v) 0.7 0.5 0.4 0.3 0.2 0.1 0 0.1 1 10 100 0.8 0.6 0.5 0.3 0.2 0.1 0 0.1 1 10 100 figure 3. typical reverse characteristics figure 4. maximum reverse characteristics v r , instantaneous reverse voltage (v) v r , instantaneous reverse voltage (v) 40 30 25 20 15 10 5 1.e?06 45 35 30 20 10 5 figure 5. typical junction capacitance v r , reverse voltage (v) 0.1 100 10,000 i f , instantaneous forward current (a) i r , instantaneous reverse current (a) c, junction capacitance (pf) 0.9 i f , instantaneous forward current (a) 35 45 1.e?05 1.e?04 1.e?03 1.e?02 1.e?01 15 25 1.e?05 1.e?04 1.e?03 1.e?02 1.e+00 i r , instantaneous reverse current (a) 10 t a = 125 c t a = ?55 c t a = 25 c t a = 150 c t a = 125 c t a = ?55 c t a = 25 c t a = 150 c t a = 125 c t a = 25 c t a = 150 c t a = 125 c t a = 25 c 1.e?01 figure 6. current derating per device t c , case temperature ( c) 80 60 140 120 20 0 0 6 12 18 i f(av) , average forward current (a) 24 40 100 square wave dc r jc = 2.0 c/w t j = 25 c 0.6 0.8 0.4 0.7 40 t a = 175 c 55 50 60 1.e?07 60 50 55 1.e?06 1 4 10 2 8 16 22 14 20 t a = 150 c t a = 175 c t a = 175 c t a = 175 c 160 175 1000
NRVTS1260EMFS www. onsemi.com 4 typical characteristics figure 7. forward power dissipation i f(av) , average forward current (a) 12 8 6 2 0 0 2 6 10 14 p f(av) , average forward power dissipation (w) square wave dc i pk /i av = 5 i pk /i av = 20 i pk /i av = 10 410 4 8 12 16 18 20 22 24 26 11 7 5 13 9 0.1 0.00001 pulse time (s) 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) 1 0.1 0.00001 pulse time (s) 100 10 0.1 0.01 0.0001 0.001 0.01 1.0 10 100 0.000001 50% (duty cycle) 20% 10% 5.0% 2.0% 1.0% single pulse 1000 r(t) (c/w) figure 8. typical thermal characteristics 1 figure 9. typical transient thermal response characteristics, junction?to?case assumes 25 c ambient and soldered to a 600 mm 2 ? oz copper pad on pcb
NRVTS1260EMFS www. onsemi.com 5 package dimensions dfn5 5x6, 1.27p (so?8fl) case 488aa issue m style 2: pin 1. anode 2. anode 3. anode 4. no connect 5. cathode *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.270 2x 0.750 1.000 0.905 4.530 1.530 4.560 0.495 3.200 1.330 0.965 2x 2x 4x 4x pitch dimensions: millimeters 1 recommended m 3.00 3.40 0 ??? 3.80 12 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeter. 3. dimension d1 and e1 do not include mold flash protrusions or gate burrs. 1234 top view side view bottom view d1 e1 d e 2 2 b a 0.20 c 0.20 c 2 x 2 x dim min nom millimeters a 0.90 1.00 a1 0.00 ??? b 0.33 0.41 c 0.23 0.28 d 5.15 d1 4.70 4.90 d2 3.80 4.00 e 6.15 e1 5.70 5.90 e2 3.45 3.65 e 1.27 bsc g 0.51 0.575 k 1.20 1.35 l 0.51 0.575 l1 0.125 ref a 0.10 c 0.10 c detail a 14 l1 e/2 8x d2 g e2 k b a 0.10 b c 0.05 c l detail a a1 c 4 x c seating plane max 1.10 0.05 0.51 0.33 5.10 4.20 6.10 3.85 0.71 1.50 0.71 m pin 5 (exposed pad) 5.00 5.30 6.00 6.30 e on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 NRVTS1260EMFS/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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